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BSIM4 parameter List [归类版]

上一篇 / 下一篇  2011-11-10 23:31:35 / 个人分类:CMOS

===================BSIM4.3.0 Model Selectors/Controllers============
LEVEL  SPICE3 model selector   
VERSION  Model version    
BINUNIT  Binning unitr    
PARAMCHK  Switch for parameter value check 
MOBMOD  Mobility model   
RDSMOD  Bias-dependent source/drain resis¥tance model
IGCMOD  Gate-to-channel tunneling current model    
IGBMOD  Gate-to-substrate tunneling current model   
CAPMOD  Capacitance model 
RGATEMOD Gate resistance model 
RBODYMOD Substrate resistance network model 
TRNQSMOD Transient NQS model 
ACNQSMOD AC small-signal NQS model
FNOIMOD  Flicker noise model  
TNOIMOD  Thermal noise model 
DIOMOD  Source/drain junction diode IV 
TEMPMOD  Temperature mode selector    
PERMOD  Whether PS/PD includes the gate-edge perimeter 
GEOMOD   Geometry-dependent parasitics  
RGEOMOD   Source/drain diffusion resistance and contact model 
=====================Process Parameters======================
EPSROX  Gate dielectric constant relative to vacuum  3.9 (SiO2)  
TOXE  Electrical gate equivalent oxide thick¥nes
TOXP  Physical gate equivalent oxide thick¥ness
TOXM  Tox at which parameters are extracted  
DTOX  Defined as (TOXE-TOXP)  
XJ  S/D junction depth 
GAMMA1 (g1 in equation)  Body-effect coefficient near the sur¥face    
GAMMA2 (g2 in equation)  Body-effect coefficient in bulk
NDEP  Channel doping concentration at depletion edge for zero body bias   
NSUB  Substrate doping concentration 
NGATE  Poly Si gate doping concentration 
NSD  Source/drain doping concentration 
VBX  Vbs at which the depletion region width equalsXT  
XT  Doping depth  1.55e-7m  Yes  - 
RSH  Source/drain sheet resistance   
RSHG  Gate electrode sheet resistance    
=======================Basic Model Parameters==========================
VTH0 or VTHO  Long-channel threshold voltage at Vbs=0  0.7V (NMOS) -0.7V (PMOS)  Yes  Note-4  
VFB  Flat-band voltage  -1.0V  Yes  Note-4  
PHIN  Non-uniform. vertical doping effect on surface potential  0.0V  Yes  - 
K1  First-order body bias coefficient  0.5V1/2  Yes  Note-5  
K2  Second-order body bias coefficient  0.0  Yes  Note-5  
K3  Narrow width coefficient  80.0  Yes  - 
K3B  Body effect coefficient of K3  0.0 V-1  Yes  - 
W0  Narrow width parameter  2.5e-6m  Yes  - 
LPE0  Lateral non-uniform. doping parameter at Vbs=0  1.74e-7m  Yes  - 
LPEB  Lateral non-uniform. doping effect on K1  0.0m  Yes  - 
VBM  Maximum applied body bias in VTH0 calculation  -3.0V  Yes  - 
DVT0  First coefficient of short-channel effect on Vth  2.2  Yes  - 
DVT1  Second coefficient of short-channel effect on Vth  0.53  Yes  - 
DVT2  Body-bias coefficient of short-channel effect on Vth  -0.032V-1  Yes  - 
DVTP0  First coefficient of drain-inducedVth shift due to for long-channel pocket devices  0.0m  Yes  Not mod¥eled if binned DVTP0 <=0.0  
DVTP1  First coefficient of drain-inducedVth shift due to for long-channel pocket devices  0.0V-1  Yes  - 
DVT0W  First coefficient of narrow width effect on Vth for small channel length  0.0  Yes  - 
DVT1W  Second coefficient of narrow width effect on Vth for small channel length  5.3e6m-1  Yes  - 
DVT2W  Body-bias coefficient of narrow width effect for small channel length  -0.032V-1  Yes  - 
U0  Low-field mobility  0.067 m2/(Vs) (NMOS); 0.025 m2/(Vs) PMOS  Yes  - 
UA  Coefficient of first-order mobility degradation due to vertical field  1.0e-9m/V for MOBMOD =0 and 1; 1.0e-15m/V for MOBMOD =2  Yes  - 
UB  Coefficient of secon-order mobility degradation due to vertical field  1.0e-19m2/ V2  Yes  - 
UC  Coefficient of mobility degradation due to body-bias effect  -0.0465V-1 for MOB¥MOD=1; -0.0465e-9 m/V2 for MOBMOD =0 and 2  Yes  - 
EU  Exponent for mobility degradation of MOBMOD=2  1.67 (NMOS); 1.0 (PMOS)  - 
VSAT  Saturation velocity  8.0e4m/s  Yes  - 
A0  Coefficient of channel-length depen¥dence of bulk charge effect  1.0  Yes  - 
AGS  Coefficient of Vgs dependence of bulk charge effect  0.0V-1  Yes  - 
B0  Bulk charge effect coefficient for channel width  0.0m  Yes  - 
B1  Bulk charge effect width offset  0.0m  Yes  - 
KETA  Body-bias coefficient of bulk charge effect  -0.047V-1  Yes  - 
A1  First non-saturation effect parameter  0.0V-1  Yes  - 
A2  Second non-saturation factor  1.0  Yes  - 
WINT  Channel-width offset parameter  0.0m  No  - 
LINT  Channel-length offset parameter  0.0m  No  - 
DWG  Coefficient of gate bias dependence of Weff  0.0m/V  Yes  - 
DWB  Coefficient of body bias dependence of Weff bias dependence  0.0m/V1/2  Yes  - 
VOFF  Offset voltage in subthreshold region for large W and L  -0.08V  Yes  - 
VOFFL  Channel-length dependence of VOFF  0.0mV  No  - 
MINV  Vgsteff fitting parameter for moderate inversion condition  0.0  Yes  - 
NFACTOR  Subthreshold swing factor  1.0  Yes  - 
ETA0  DIBL coefficient in subthreshold region  0.08  Yes  - 
ETAB  Body-bias coefficient for the sub¥threshold DIBL effect  -0.07V-1  Yes  - 
DSUB  DIBL coefficient exponent in sub¥threshold region  DROUT  Yes  - 
CIT  Interface trap capacitance  0.0F/m2  Yes  - 
CDSC  coupling capacitance between source/ drain and channel  2.4e-4F/m2  Yes  - 
CDSCB  Body-bias sensitivity of Cdsc  0.0F/(Vm2)  Yes  - 
CDSCD  Drain-bias sensitivity of CDSC  0.0(F/Vm2)  Yes  - 
PCLM  Channel length modulation parameter  1.3  Yes  - 
PDIBLC1  Parameter for DIBL effect on Rout  0.39  Yes  - 
PDIBLC2  Parameter for DIBL effect on Rout  0.0086  Yes  - 
PDIBLCB  Body bias coefficient of DIBL effect on Rout  0.0V-1  Yes  - 
DROUT  Channel-length dependence of DIBL effect on Rout  0.56  Yes  - 
PSCBE1  First substrate current induced body-effect parameter  4.24e8V/m  Yes  - 
PSCBE2  Second substrate current induced body-effect parameter  1.0e-5m/V  Yes  - 
PVAG  Gate-bias dependence of Early volt¥age  0.0  Yes  - 
DELTA (d in equation)  Parameter for DC Vdseff  0.01V  Yes  - 
FPROUT  Effect of pocket implant on Rout deg¥radation  0.0V/m0.5  Yes  Not mod¥eled if binned FPROUT not posi¥tive  
PDITS  Impact of drain-induced Vth shift on Rout  0.0V-1  Yes  Not mod¥eled if binned PDITS=0; Fatal error if binned PDITS negative  
PDITSL  Channel-length dependence of drain-induced Vth shift for Rout  0.0m-1  No  Fatal error if PDITSL negative  
PDITSD  Vds dependence of drain-induced Vth shift for Rout  0.0V-1  Yes  - 
LAMBDA  Velocity overshoot coefficient  0.0  Yes  If not given or (<=0.0), velocity overshoot will be turned off  
VTL  Thermal velocity  2.05e5[m/s]  Yes  If not given or (<=0.0), source end thermal velocity will be turned off  
LC  Velocity back scattering coefficient  0.0[m]  No  5e9[m] at room tem¥perature  
XN  Velocity back scattering coefficient  3.0  Yes  - 
================Parameters for Asymmetric and Bias-Dependent Rds Model================== 
RDSW  Zero bias LDD resistance per unit width for RDSMOD=0  200.0 ohm(mm)WR  Yes  If negative, reset to 0.0  
RDSWMIN  LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD=0  0.0 ohm(mm)WR  No  - 
RDW  Zero bias lightly-doped drain resis¥tance Rd(V) per unit width for RDS¥MOD=1  100.0 ohm(mm)WR  Yes  - 
RDWMIN  Lightly-doped drain resistance per unit width at high Vgs and zero Vbs for RDSMOD=1  0.0 ohm(mm)WR  No  - 
RSW  Zero bias lightly-doped source resis¥tance Rs(V) per unit width for RDS¥MOD=1  100.0 ohm(mm)WR  Yes  - 
RSWMIN  Lightly-doped source resistance per unit width at high Vgs and zero Vbs for RDSMOD=1  0.0 ohm(mm)WR  No  - 
PRWG  Gate-bias dependence of LDD resis¥tance  1.0V-1  Yes  - 
PRWB  Body-bias dependence of LDD resis¥tance  0.0V-0.5  Yes  - 
WR  Channel-width dependence parameter of LDD resistance  1.0  Yes  - 
NRS   Number of source diffusion squares  1.0  No  - 
NRD   Number of drain diffusion squares  1.0  No  - 
==================Impact Ionization Current Model Parameters================== 
ALPHA0  First parameter of impact ionization current  0.0Am/V  Yes  - 
ALPHA1  Isub parameter for length scaling  0.0A/V  Yes  - 
BETA0  The second parameter of impact ion¥ization current  30.0V  Yes  - 
===================Gate-Induced Drain Leakage Model Parameters=================== 
AGIDL  Pre-exponential coefficient for GIDL  0.0mho  Yes  Igidl=0.0 if binned AGIDL =0.0  
BGIDL  Exponential coefficient for GIDL  2.3e9V/m  Yes  Igidl=0.0 if binned BGIDL =0.0  
CGIDL  Paramter for body-bias effect on GIDL  0.5V3  Yes  - 
EGIDL  Fitting parameter for band bending for GIDL  0.8V  Yes  - 
===================Gate Dielectric Tunneling Current Model Parameters =============
AIGBACC  Parameter for Igb in accumulation  0.43 (Fs2/g)0.5m-1  Yes  - 
BIGBACC  Parameter for Igb in accumulation  0.054 (Fs2/g)0.5 m-1V-1  Yes  - 
CIGBACC  Parameter for Igb in accumulation  0.075V-1  Yes  - 
NIGBACC  Parameter for Igb in accumulation  1.0  Yes  Fatal error if binned value not positive  
AIGBINV  Parameter for Igb in inversion  0.35 (Fs2/g)0.5m-1  Yes  - 
BIGBINV  Parameter for Igb in inversion  0.03 (Fs2/g)0.5 m-1V-1  Yes  - 
CIGBINV  Parameter for Igb in inversion  0.006V-1  Yes  - 
EIGBINV  Parameter for Igb in inversion  1.1V  Yes  - 
NIGBINV  Parameter for Igb in inversion  3.0  Yes  Fatal error if binned value not positive  
AIGC  Parameter for Igcs and Igcd  0.054 (NMOS) and 0.31 (PMOS) (Fs2/g)0.5m-1  Yes  -   
BIGC  Parameter for Igcs and Igcd  0.054 (NMOS) and 0.024 (PMOS) (Fs2/g)0.5 m-1V-1  Yes  - 
CIGC  Parameter for Igcs and Igcd  0.075 (NMOS) and 0.03 (PMOS) V-1  Yes  - 
AIGSD  Parameter for Igs and Igd  0.43 (NMOS) and 0.31 (PMOS) (Fs2/g)0.5m-1  Yes  - 
BIGSD  Parameter for Igs and Igd  0.054 (NMOS) and 0.024 (PMOS) (Fs2/g)0.5 m-1V-1  Yes  - 
CIGSD  Parameter for Igs and Igd  0.075 (NMOS) and 0.03 (PMOS) V-1  Yes  - 
DLCIG  Source/drain overlap length for Igs and Igd  LINT  Yes  - 
NIGC  Parameter for Igcs, Igcd ,Igs and Igd  1.0  Yes  Fatal error if binned value not positive  
POXEDGE  Factor for the gate oxide thickness in source/drain overlap regions  1.0  Yes  Fatal error if binned value not positive  
PIGCD  Vds dependence of Igcs and Igcd  1.0  Yes  Fatal error if binned value not positive  
NTOX  Exponent for the gate oxide ratio  1.0  Yes  - 
TOXREF  Nominal gate oxide thickness for gate dielectric tunneling current model only  3.0e-9m  No  Fatal error if not posi¥tive  
=============Charge and Capacitance Model Parameters========================
XPART  Charge partition parameter  0.0  No  - 
CGSO  Non LDD region source-gate overlap capacitance per unit channel width  calculated (F/m)  No  Note-6  
CGDO  Non LDD region drain-gate overlap capacitance per unit channel width  calculated (F/m)  No  Note-6  
CGBO  Gate-bulk overlap capacitance per unit channel length  0.0  F/m  Note-6  
CGSL  Overlap capacitance between gate and lightly-doped source region  0.0F/m  Yes  - 
CGDL  Overlap capacitance between gate and lightly-doped source region  0.0F/m  Yes  - 
CKAPPAS  Coefficient of bias-dependent overlap capacitance for the source side  0.6V  Yes  - 
CKAPPAD  Coefficient of bias-dependent overlap capacitance for the drain side  CKAPPAS  Yes  - 
CF  Fringing field capacitance  calculated (F/m)  Yes  Note-7  
CLC  Constant term for the short channel model  1.0e-7m  Yes  - 
CLE  Exponential term for the short channel model  0.6  Yes  - 
DLC  Channel-length offset parameter for CV model  LINT (m)  No  - 
DWC  Channel-width offset parameter for CV model  WINT (m)  No  - 
VFBCV  Flat-band voltage parameter (for CAPMOD=0 only)  -1.0V  Yes  - 
NOFF  CV parameter inVgsteff,CV for weak to strong inversion  1.0  Yes  - 
VOFFCV  CV parameter inVgsteff,CV for week to strong inversion  0.0V  Yes  -   
ACDE  Exponential coefficient for charge thickness in CAPMOD=2 for accumu¥lation and depletion regions  1.0m/V  Yes  - 
MOIN  Coefficient for the gate-bias depen¥dent surface potential  15.0  Yes  - 
=======================High-Speed/RF Model Parameters========================
XRCRG1  Parameter for distributed channel-resistance effect for both intrinsic-input resistance and charge-deficit NQS models  12.0  Yes  Warning message issued if binned XRCRG1 <=0.0  
XRCRG2  Parameter to account for the excess channel diffusion resistance for both intrinsic input resistance and charge-deficit NQS models  1.0  Yes  - 
RBPB   Resistance connected between bNodePrime and bNode  50.0ohm  No  If less than 1.0e-3ohm, reset to 1.0e-3ohm  
RBPD   Resistance connected between bNodePrime and dbNode  50.0ohm  No  If less than 1.0e-3ohm, reset to 1.0e-3ohm  
RBPS   Resistance connected between bNodePrime and sbNode  50.0ohm  No  If less than 1.0e-3ohm, reset to 1.0e-3ohm  
RBDB   Resistance connected between dbNode and bNode  50.0ohm  No  If less than 1.0e-3ohm, reset to 1.0e-3ohm  
RBSB   Resistance connected between sbNode and bNode  50.0ohm  No  If less than 1.0e-3ohm, reset to 1.0e-3ohm  
GBMIN  Conductance in parallel with each of the five substrate resistances to avoid potential nuge issued if less than 1.0e-20 mho  
=====================Flicker and Thermal Noise Model Parameters======================== 
NOIA  Flicker noise parameter A  6.25e41 (eV)-1s1¥EFm-3 for NMOS; 6.188e40 (eV)-1s1¥EFm-3 for PMOS  No  - 
NOIB  Flicker noise parameter B  3.125e26 (eV)-1s1¥EFm-1 for NMOS; 1.5e25 (eV)-1s1¥EFm-1 for PMOS  No  - 
NOIC  Flicker noise parameter C  8.75 (eV)-1s1-EFm  No  - 
EM  Saturation field  4.1e7V/m  No  - 
AF  Flicker noise exponent  1.0  No  - 
EF  Flicker noise frequency exponent  1.0  No  - 
KF  Flicker noise coefficient  0.0 A2-EFs1-EF F  No  - 
NTNOI  Noise factor for short-channel devices for TNOIMOD=0 only  1.0  No  - 
TNOIA  Coefficient of channel-length depen¥dence of total channel thermal noise  1.5E6  No  - 
TNOIB  Channel-length dependence parameter for channel thermal noise partitioning  3.5E6  No  - 
RNOIA  Thermal Noise Coefficient  0.577  No  - 
RNOIB  Thermal Noise Coefficient  0.37  No  - 
=======================Layout-Dependent Parasitics Model Parameters=================== 
DMCG  Distance from S/D contact center to the gate edge  0.0m  No  - 
DMCI  Distance from S/D contact center to the isolation edge in the channel-length direction  DMCG  No  - 
DMDG  Same as DMCG but for merged device only  0.0m  No  - 
DMCGT  DMCG of test structures  0.0m  No  - 
NF   Number of device fingers  1  No  Fatal error if less than one  
DWJ  Offset of the S/D junction width  DWC (in CVmodel)  No  - 
MIN   Whether to minimize the number of drain or source diffusions for even-number fingered device  0 (minimize the drain dif¥fusion num¥ber)  No  - 
XGW  Distance from the gate contact to the channel edge  0.0m  No  - 
XGL  Offset of the gate length due to varia¥tions in patterning  0.0m  No  - 
XL  Channel length offset due to mask/ etch effect  0.0m  No  - 
XW  Channel width offset due to mask/etch effect  0.0m  No  - 
NGCON  Number of gate contacts  1  No  Fatal error if less than one; if not equal to 1 or 2, warn¥ing mes¥sage issued and reset to 1  
=======================Asymmetric Source/Drain Junction Diode Model Parameters===================== 
IJTHSREV  Limiting current in reverse bias region  IJTHSREV =0.1A IJTHDREV =IJTHSREV  No  If not posi¥tive, reset to 0.1A  
IJTHSFWD  Limiting current in forward bias region  IJTHSFWD =0.1A IJTHDFWD =IJTHS¥FWD  No  If not posi¥tive, reset to 0.1A  
XJBVS  Fitting parameter for diode break¥down  XJBVS=1.0 XJBVD =XJBVS  No  Note-8  
BVS  Breakdown voltage  BVS=10.0V BVD=BVS  No  If not posi¥tive, reset to 10.0V  
JSS  Bottom junction reverse saturation current density  JSS= 1.0e-4A/m2 JSD=JSS  No  - 
JSWS  Isolation-edge sidewall reverse satura¥tion current density  JSWS =0.0A/m JSWD =JSWS  No  - 
JSWGS  Gate-edge sidewall reverse saturation current density  JSWGS =0.0A/m JSWGD =JSWGS  No  - 
CJS  Bottom junction capacitance per unit area at zero bias  CJS=5.0e-4 F/m2 CJD=CJS  No  - 
MJS  Bottom junction capacitance grating coefficient  MJS=0.5 MJD=MJS  No  - 
MJSWS  Isolation-edge sidewall junction capacitance grading coefficient  MJSWS =0.33 MJSWD =MJSWS  No  - 
CJSWS  Isolation-edge sidewall junction capacitance per unit area  CJSWS= 5.0e-10 F/m CJSWD =CJSWS  No  - 
CJSWGS  Gate-edge sidewall junction capaci¥tance per unit length  CJSWGS =CJSWS CJSWGD =CJSWS  No  - 
MJSWGS  Gate-edge sidewall junction capaci¥tance grading coefficient  MJSWGS =MJSWS MJSWGD =MJSWS  No  - 
PB  Bottom junction built-in potential  PBS=1.0V PBD=PBS  No  - 
PBSWS  Isolation-edge sidewall junction built-in potential  PBSWS =1.0V PBSWD =PBSWS  No  - 
PBSWGS  Gate-edge sidewall junction built-in potential  PBSWGS =PBSWS PBSWGD =PBSWS  No  - 
IJTHDREV  Limiting current in reverse bias region  IJTHSREV =0.1A IJTHDREV =IJTHSREV  No  If not posi¥tive, reset to 0.1A  
IJTHDFWD  Limiting current in forward bias region  IJTHSFWD =0.1A IJTHDFWD =IJTHS¥FWD  No  If not posi¥tive, reset to 0.1A  
XJBVD  Fitting parameter for diode break¥down  XJBVS=1.0 XJBVD =XJBVS  No  Note-8  
BVD  Breakdown voltage  BVS=10.0V BVD=BVS  No  If not posi¥tive, reset to 10.0V  
JSD  Bottom junction reverse saturation current density  JSS= 1.0e-4A/m2 JSD=JSS  No  - 
JSWD  Isolation-edge sidewall reverse satura¥tion current density  JSWS =0.0A/m JSWD =JSWS  No  - 
JSWGD  Gate-edge sidewall reverse saturation current density  JSWGS =0.0A/m JSWGD =JSWGS  No  - 
CJD  Bottom junction capacitance per unit area at zero bias  CJS=5.0e-4 F/m2 CJD=CJS  No  - 
MJD  Bottom junction capacitance grating coefficient  MJS=0.5 MJD=MJS  No  - 
MJSWD  Isolation-edge sidewall junction capacitance grading coefficient  MJSWS =0.33 MJSWD =MJSWS  No  - 
CJSWD  Isolation-edge sidewall junction capacitance per unit area  CJSWS= 5.0e-10 F/m CJSWD =CJSWS  No  - 
CJSWGD  Gate-edge sidewall junction capaci¥tance per unit length  CJSWGS =CJSWS CJSWGD =CJSWS  No  - 
MJSWGD  Gate-edge sidewall junction capaci¥tance grading coefficient  MJSWGS =MJSWS MJSWGD =MJSWS  No  - 
PBSWD  Isolation-edge sidewall junction built-in potential  PBSWS =1.0V PBSWD =PBSWS  No  - 
PBSWGD  Gate-edge sidewall junction built-in potential  PBSWGS =PBSWS PBSWGD =PBSWS  No  - 
=======================Temperature Dependence Parameters=====================================
TNOM  Temperature at which parameters are extracted  27oC  No  - 
UTE  Mobility temperature exponent  -1.5  Yes  - 
KT1  Temperature coefficient for threshold voltage  -0.11V  Yes  - 
KT1L  Channel length dependence of the temperature coefficient for threshold voltage  0.0Vm  Yes  - 
KT2  Body-bias coefficient of Vth tempera¥ture effect  0.022  Yes  - 
UA1  Temperature coefficient for UA  1.0e-9m/V  Yes  - 
UB1  Temperature coefficient for UB  -1.0e-18 (m/V)2  Yes  - 
UC1  Temperature coefficient for UC  0.056V-1 for MOB¥MOD=1; 0.056e-9m/ V2 for MOB¥MOD=0 and 2  Yes  - 
AT  Temperature coefficient for satura¥tion velocity  3.3e4m/s  Yes  - 
PRT  Temperature coefficient for Rdsw  0.0ohm-m  Yes  - 
NJS   Emission coefficients of junction for source and drain junctions, respec¥tively  NJS=1.0; NJD=NJS  No  - 
XTIS   Junction current temperature expo¥nents for source and drain junctions, respectively  XTIS=3.0; XTID=XTIS  No  - 
NJD  Emission coefficients of junction for source and drain junctions, respec¥tively  NJS=1.0; NJD=NJS  No  - 
XTID  Junction current temperature expo¥nents for source and drain junctions, respectively  XTIS=3.0; XTID=XTIS  No  - 
TPB  Temperature coefficient of PB  0.0V/K  No  - 
TPBSW  Temperature coefficient of PBSW  0.0V/K  No  - 
TPBSWG  Temperature coefficient of PBSWG  0.0V/K  No  - 
TCJ  Temperature coefficient of CJ  0.0K-1  No  - 
TCJSW  Temperature coefficient of CJSW  0.0K-1  No  - 
TCJSWG  Temperature coefficient of CJSWG  0.0K-1  No  - 
=====================Stress Effect Model Parameters====================================
SA   Distance between OD edge to Poly from one side  0.0  If not given or(<=0), stress effect will be turned off  
SB   Distance between OD edge to Poly from other side  0.0  If not given or(<=0), stress effect will be turned off  
SD   Distance between neighbouring fin¥gers  0.0  For NF>1 :If not given or(<=0), stress effect will be turned off  
SAref  Reference distance between OD and edge to poly of one side  1E-06[m]  No  >0.0  
SBref  Reference distance between OD and edge to poly of the other side  1E-06[m]  No  >0.0  
WLOD  Width parameter for stress effect  0.0[m]  No  - 
KU0  Mobility degradation/enhancement coefficient for stress effect  0.0[m]  No  - 
KVSAT  Saturation velocity degradation/ enhancement parameter for stress effect  0.0[m]  No  -1<=kvsat< =1  
TKU0  Temperature coefficient of KU0  0.0  No  - 
LKU0  Length dependence of ku0  0.0  No  - 
WKU0  Width dependence of ku0  0.0  No  - 
LLODKU0  Length parameter for u0 stress effect  0.0  No  >0  
WLODKU0  Width parameter for u0 stress effect  0.0  No  >0  
KVTH0  Threshold shift parameter for stress effect  0.0[Vm]  No  - 
LKVTH0  Length dependence of kvth0  0.0  No  - 
WKVTH0  Width dependence of kvth0  0.0  No  - 
PKVTH0  Cross-term dependence of kvth0  0.0  No  - 
LLODVTH  Length parameter for Vth stress effect  0.0  No  >0  
WLODVTH  Width parameter for Vth stress effect  0.0  No  >0  
STK2  K2 shift factor related to Vth0 change  0.0[m]  No  
LODK2  K2 shift modification factor for stress effect  1.0  No  >0  
STETA0  eta0 shift factor related to Vth0 change  0.0[m]  No  
LODETA0  eta0 shift modification factor for stress effect  1.0  No  >0  
===================dW and dL Parameters=====================
WL  Coefficient of length dependence for width offset  0.0mWLN  No  - 
WLN  Power of length dependence of width offset  1.0  No  - 
WW  Coefficient of width dependence for width offset  0.0mWWN  No  - 
WWN  Power of width dependence of width offset  1.0  No  - 
WWL  Coefficient of length and width cross term dependence for width offset  0.0 mWWN+WLN  No  - 
LL  Coefficient of length dependence for length offset  0.0mLLN  No  - 
LLN  Power of length dependence for length offset  1.0  No  - 
LW  Coefficient of width dependence for length offset  0.0mLWN  No  - 
LWN  Power of width dependence for length offset  1.0  No  - 
LWL  Coefficient of length and width cross term dependence for length offset  0.0 mLWN+LLN  No  - 
LLC  Coefficient of length dependence for CV channel length offset  LL  No  - 
LWC  Coefficient of width dependence for CV channel length offset  LW  No  - 
LWLC  Coefficient of length and width cross-term dependence for CV channel length offset  LWL  No  - 
WLC  Coefficient of length dependence for CV channel width offset  WL  No  - 
WWC  Coefficient of width dependence for CV channel width offset  WW  No  - 
WWLC  Coefficient of length and width cross-term dependence for CV channel width offset  WWL  No  - 
===================Range Parameters for Model Application=========================
LMIN  Minimum channel length  0.0m  No  - 
LMAX  Maximum channel length  1.0m  No  - 
WMIN  Minimum channel width  0.0m  No  - 
WMAX  Maximum channel width  1.0m  No  - 


TAG: BSIM4 parameter

引用 删除 sheyiqi   /   2016-11-21 15:57:39
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peifei的个人空间 引用 删除 peifei   /   2012-04-28 10:30:30
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